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NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver
Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium-speed saturated switching applications. Features: D Low Collector-Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter-Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20A Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +100C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +100C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Punch-Through Voltage Collector Cutoff Current V(BR)CBO IC = 20A, IE = 0 V(BR)EBO IE = 20A, IC = 0 VPT ICBO IEBO VEBfl = 1V, Note 1 VCB = 12V, IE = 0 VCB = 12V, IE = 0, TA = +80C Emitter Cutoff Current VEB = 2.5V, IC = 0 25 12 24 - - - - - - 0.8 20 0.5 - - - 5.0 90 2.5 V V V A A A Symbol Test Conditions Min Typ Max Unit
Note 1. VPT is determined by measuring the Emitter-Base floating potential VEBfl, using a voltmeter with 11M minimum input impedance. The Collector-Base Voltage, VCB, is increased until VEBfl = 1V; this value of VCB = (VPT + 1).
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter ON Characteristics DC Current Gain hFE VCE(sat) VBE VCE = 150mV, IC = 12mA VCE = 200mV, IC = 24mA Collector-Emitter Saturation Voltage IC = 12mA, IB = 0.4mA IC = 24mA, IB = 1mA Base-Emitter Voltage IC = 12mA, IB = 0.4mA IC = 24mA, IB = 1mA Small-Signal Characteristics Alpha Cutoff Frequency Output Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance Switching Characteristics Delay Time Rise Time Storage Time Fall Time Stored Base Charge td tr ts tf Qsb
.352 (8.95) Dia Max .320 (98.13) Dia Max
Symbol
Test Conditions
Min
Typ
Max
Unit
30 24 - - - -
80 90 0.09 0.09 0.27 0.30
- - 0.15 0.20 0.35 0.40 V V V V
fhfb Cob hie hre hfe hoe
VCB = 6V, IE = 1mA VCB = 6V, IE = 1mA, f = 1MHz VCE = 6V, IE = 1mA, f = 1MHz
4 - - - - -
25 8 3.6 8 135 50
- 20 - - - -
MHz pF k x 10-4 mhos s s s s pC
- - - - -
0.07 0.12 0.20 0.10 300
- - - - 1400
.250 (6.35) Max
1.500 (38.1) Min
.019 (0.5) Dia Base Emitter Collector
45
.031 (.793)

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